Semiconductor device and manufacturing method thereof

• Main Authors: ZHENG RONGJIAN, WANG ZHIHAO, JIANG GUOCHENG, ZHU XINING, CHEN GUANLIN
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In one embodiment, a device includes: a first stack of nanostructures formed over a substrate; a second stack of nanostructures formed adjacent to the first stack; a first gate structure on the nanostructure of the first stack; a second gate structure on the nanostructure of the second stack; a first insulating wall separating the first gate structure from the second gate structure; a hard mask layer on the first gate structure and the second gate structure; and a gate contact extending through the hard mask layer to physically and electrically contact the first gate structure. The embodiment of the invention also relates to a semiconductor device and a manufacturing method thereof. 器件包括：纳米结构的第一堆叠件，形成在衬底上方；纳米结构的第二堆叠件，形成为与第一堆叠件相邻；第一栅极结构，位于第一堆叠件的纳米结构上；第二栅极结构，位于第二堆叠件的纳米结构上；第一绝缘壁，将第一栅极结构和第二栅极结构分隔开；硬掩模层，位于第一栅极结构上和第二栅极结构上；以及栅极接触件，延伸穿过硬掩模层以物理和电接触第一栅极结构。本申请的实施例还涉及半导体器件及其制造方法。