Formation method of semiconductor structure

• Main Author: FAN YIQIU
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A forming method of a semiconductor structure comprises the steps that a composite structure, a source drain layer and an interlayer dielectric layer are formed on a substrate, a first gate groove is formed in the interlayer dielectric layer, the composite structure comprises a plurality of overlapped composite layers, and each composite layer comprises a sacrificial structure and a channel layer located on the sacrificial structure; the sacrificial layer structure comprises a sacrificial layer and an inner side wall located on the surface of the side wall of the sacrificial layer, the first gate groove stretches across the composite structure in the first direction and is located on the top of the composite structure and the surface of the second side wall, and the side wall surface, exposed out of the first gate groove, of the channel layer serves as a channel surface; the source and drain layers are also positioned on two sides of the first gate trench and are positioned on the first side wall of the compo