Memory including row circuit and method of operating same

• Main Authors: KU SANG-HYUN, KIM DO-HONG, KANANUMA JUN, SUK MIN-HO, HONG DEOK HWA
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2024
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention relates to a memory and an operating method thereof. The memory includes: a plurality of word lines; and a row circuit. The row circuit is configured to: activate at least one word line among the plurality of word lines to an activation voltage level during an activation operation, and discharge the activated word line during a pre-charge operation; and discharging the activated word line from an active voltage level to a pre-charge voltage level in a different manner during a pre-charge operation in response to the pre-charge command and during a pre-charge operation during the refresh operation. 本公开涉及存储器及其操作方法。存储器包括：多个字线；以及行电路。行电路被配置为：在激活操作期间将多个字线之中的至少一个字线激活至激活电压电平，以及在预充电操作期间将激活的字线放电；以及在响应于预充电命令的预充电操作期间和在刷新操作期间的预充电操作期间以不同的方式将激活的字线从激活电压电平放电至预充电电压电平。