PVT METHOD AND APPARATUS FOR THE PRODUCTION OF SINGLE CRYSTALS SAFETY IN THE PROCESS

• Main Authors: BAUMAKER THOMAS, VOGEL LORENZ, WIEMANN KARSTEN, SCHELLER MICHAEL
• Format: Patent
• Language: Chinese; English
• Published: 10.05.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The aim of the invention is to use hydrogen as a process gas in a PVT process. For this purpose, special protective measures are required in order to be able to carry out the method safely over the process. The device for carrying out the PVT method consists of a highly heatable growth unit (1), which is arranged in a process chamber (4), the walls of which consist of heat-resistant silica glass. The process chamber (4) is filled with hydrogen through the inlet valve (5). The heating device (6) is formed by an induction coil (7) which surrounds the process chamber (4) at the height of the growth unit (1) and heats the growth unit (1) to more than 2000 DEG C to 2400 DEG C. However, the use of hydrogen brings about the problem that in the event of an inevitable rupture of the silica glass of the process chamber (4), hydrogen is mixed with oxygen in the ambient air, thereby forming a combustible gas mixture which will be immediately ignited at the hotter components of the plant. Therefore, the process chamber (4