Polycrystalline silicon rod and method for producing polycrystalline silicon rod

• Main Authors: HOSHINO NARUHIRO, ISHIDA MASAHIKO, AOYAMA TAKESHI, YOSHIDA ATSUSHI, YAMAGISHI, NARUTOSHI, KANEKO YOSHIO
• Format: Patent
• Language: Chinese; English
• Published: 10.05.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A polycrystalline silicon rod according to the present invention has a diameter of 120 mm or more, a minimum resistivity of 3300 [Omega] cm or more, and an RRG of 100% or less. Another polycrystalline silicon rod according to the present invention has a diameter of 140 mm or more, a minimum resistivity of 3300 [Omega] cm or more, and an RRG of 150% or less. 本发明的一种多晶硅棒的直径为120mm以上，最低电阻率为3300Ωcm以上，且RRG为100％以下。本发明的另一种多晶硅棒的直径为140mm以上，最低电阻率为3300Ωcm以上，且RRG为150％以下。