Energy gap regulation field effect transistor, integrated circuit and electronic device

• Main Authors: NIE XIAOANG, WANG JIALE, WANG JIECHEN, DONG YAOQI, ZHANG QIANG, XU JUNHAO, HOU CHAOZHAO
• Format: Patent
• Language: Chinese; English
• Published: 07.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The embodiment of the invention relates to the field of field effect transistors, in particular to an energy gap regulation field effect transistor, an integrated circuit and electronic equipment. The invention aims to reduce the sub-threshold swing of the field effect transistor. A channel material of the energy gap regulation field effect transistor comprises a material of which the energy gap is regulated by an electric field, and the energy band gap of the material can be changed while a gate voltage regulates a potential barrier. For example, the channel material comprises at least one of layered Dirac semimetal Na3Bi and transition metal sulfide MX2; wherein M is molybdenum or tungsten; x is sulfur, selenium or tellurium. Therefore, by introducing the novel channel material, the switching performance of the field effect transistor can be effectively improved, and the sub-threshold swing and the driving voltage are reduced, so that the energy consumption is reduced. 本申请实施例涉及场效应晶体管领域，尤其涉及一种能隙调控场效应晶体管、集成电路