Anti-fuse structure, forming method thereof and memory

• Main Author: WU TIEHIANG
• Format: Patent
• Language: Chinese; English
• Published: 07.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to the technical field of semiconductors, and relates to an anti-fuse structure and a forming method thereof, and a memory, the anti-fuse structure comprises a substrate, a dielectric layer, a first conductive structure and a second conductive structure, the dielectric layer is arranged on the substrate, and the dielectric layer comprises a first dielectric layer, a second dielectric layer, a first groove and a second groove; the material of the first dielectric layer is a first type nano porous material; in the first direction, the first groove and the second groove extend into the second dielectric layer from the first dielectric layer; the first conductive structure and the second conductive structure are respectively arranged in the first groove and the second groove; the first conductive structure comprises a first diffusion barrier layer and a first conductive layer, the first diffusion barrier layer covers the first groove in a conformal manner, the first conductive layer covers t