Ion implantation pre-amorphization method for manufacturing metal silicide

• Main Authors: GUO ZHENQIANG, FAN YINGTAO
• Format: Patent
• Language: Chinese; English
• Published: 07.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides an ion implantation pre-amorphization method for manufacturing metal silicide, which comprises the following steps of: providing a substrate, forming a gate oxide layer on the substrate and a gate polycrystalline silicon layer on the gate oxide layer, and forming a side wall on the side wall of the gate polycrystalline silicon layer; forming a first protection layer covering the grid polycrystalline silicon layer on the substrate, forming a photoresist layer on the first protection layer, opening the photoresist layer on an area where the metal silicide needs to be formed through photoetching to enable the protection layer below the photoresist layer to be exposed, and removing the exposed first protection layer; ge or Si is used as an ion source to carry out ion implantation amorphization on the region where the metal silicide needs to be formed; carrying out selective ion implantation on the region in which the metal silicide needs to be formed by using the C as an ion source; and for