Light emitting diode for improving polarization effect and preparation method and product thereof

• Main Authors: ZHU CHENQI, CHEN-ZHANG XIAOXIONG, GONG YIPIN
• Format: Patent
• Language: Chinese; English
• Published: 03.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light-emitting diode for improving a polarization effect and a preparation method and a product thereof, and belongs to the technical field of photoelectron manufacturing. The light emitting diode comprises a first epitaxial layer and a second epitaxial layer, wherein the first epitaxial layer comprises a first semiconductor layer; the second epitaxial layer is located on the first side wall of the first semiconductor layer, the second epitaxial layer comprises a second semiconductor layer, a multi-quantum well layer and a third semiconductor layer which are sequentially stacked in the direction away from the first side wall, and the second epitaxial layer is a semi-polar epitaxial layer; the conduction type of the first semiconductor layer is the same as that of the second semiconductor layer, and the conduction type of the second semiconductor layer is different from that of the third semiconductor layer. The problem that a polarization electric field is easily formed in the epitaxi