Method for forming silicon-germanium epitaxial layer

• Main Authors: LI DIAN, YUAN ZIFAN
• Format: Patent
• Language: Chinese; English
• Published: 03.05.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a method for forming a silicon-germanium epitaxial layer, which comprises the following steps of: S1, pretreating a wafer according to a semiconductor process, and forming a groove in a silicon substrate of the wafer; s2, forming a first silicon germanium epitaxial layer in the groove under a first annealing process; and S3, performing a second annealing process on the first silicon-germanium epitaxial layer in the step S2 to form a second silicon-germanium epitaxial layer. The silicon-germanium epitaxial layer can be formed by adopting the first annealing process and the second annealing process, and the obtained silicon-germanium epitaxial layer is high in uniformity and high in growth speed. 本发明公开了一种硅锗外延层的形成方法，包括以下步骤：步骤S1：根据半导体工艺对晶片预处理，在晶片的硅衬底开设凹槽；步骤S2：在第一退火工艺下，在凹槽内形成第一硅锗外延层；步骤S3：对步骤S2中的第一硅锗外延层进行第二退火工艺，形成第二硅锗外延层。本发明采用第一退火工艺和第二退火工艺可形成硅锗外延层，得到的硅锗外延层均匀度高，而且成长速度快。