Apparatus and method for processing substrate comprising SiC surface, and vacuum processing system

• Main Author: XIE BINPING
• Format: Patent
• Language: Chinese; English
• Published: 03.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure provides an apparatus for processing a substrate including a SiC surface, a method, and a vacuum processing system, the apparatus for processing a substrate including a SiC surface, the apparatus including: a processing container including: a first housing; the second shell is matched with the first shell to form an accommodating space; the bearing structure is arranged in the containing space and used for bearing the substrate with the SiC surface so as to divide the containing space into a first space and a second space, and the first shell is used for generating the Si atmosphere in the first space under the heating condition. 本公开提供了用于处理包含SiC表面的基板的装置、方法以及真空处理系统，用于处理包含SiC表面的基板的装置，包括：处理容器，处理容器包括：第一壳体；第二壳体，与第一壳体相配合，以形成容纳空间；承载结构，设置在容纳空间内，用于承载包含SiC表面的基板，以将容纳空间分隔成第一空间和第二空间，其中，第一壳体用于在加热情况下在第一空间内产生Si气氛。