Vertical power semiconductor device including SIC semiconductor body

A vertical power semiconductor device including an SIC semiconductor body is disclosed. A vertical power semiconductor device (100) is presented. A vertical power semiconductor device (100) includes a SiC semiconductor body (102) having a first surface (104) and a second surface (106) opposite each...

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Bibliographic Details
Main Authors SIMIELNIK, TODD, R, JOHANNES GEORG LAVEN, SCHULZ HANS-JUERGEN
Format Patent
LanguageChinese
English
Published 30.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A vertical power semiconductor device including an SIC semiconductor body is disclosed. A vertical power semiconductor device (100) is presented. A vertical power semiconductor device (100) includes a SiC semiconductor body (102) having a first surface (104) and a second surface (106) opposite each other along a vertical direction (y). The SiC semiconductor body (102) includes at least one SiC semiconductor layer (1021) on a SiC semiconductor substrate (1022). A pn junction (108) is formed in the at least one SiC semiconductor layer (1021). A first load electrode (L1) is arranged on the first surface (104). The vertical power semiconductor device (100) further includes a plurality of first trenches (110) extending from the second surface (106) into the SiC semiconductor substrate (1022). A second load electrode (L2) is arranged on the second surface (106). The second load electrode (L2) is electrically connected to the SiC semiconductor substrate (1022) via at least side walls (112) of the plurality of first
Bibliography:Application Number: CN202311417532