Formation method of semiconductor structure

• Main Authors: TU WUTAO, FAN YIQIU
• Format: Patent
• Language: Chinese; English
• Published: 30.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a semiconductor structure comprises the following steps: providing a substrate which comprises a first region and a second region; forming pseudo grids on the substrate, wherein the distance between the pseudo grids on the first region is smaller than the distance between the pseudo grids on the second region; forming an initial dielectric layer on the substrate and the side wall of the pseudo gate, wherein the surface of the initial dielectric layer on the first region is higher than the surface of the initial dielectric layer on the second region; performing back etching on the initial dielectric layer on the first region and the second region to form an interlayer dielectric layer, the surface of the interlayer dielectric layer on the first region being lower than the surface of the interlayer dielectric layer on the second region; forming an isolation layer on the interlayer dielectric layer; removing the pseudo gate to form a gate opening; forming a gate structure in the gate opening