Fog chemical vapor deposition system and method for analyzing growth condition of alpha-Ga2O3

• Main Authors: GUO FANGZHENG, WU SHIYING, JIANG SHAOQING, CHEN LIN
• Format: Patent
• Language: Chinese; English
• Published: 26.04.2024
• Subjects: CALCULATING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPUTING; COUNTING; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DIGITAL DATA PROCESSING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a fog chemical vapor deposition system and a fog chemical vapor deposition method for analyzing the growth condition of alpha-Ga2O3 in the technical field of semiconductor materials, and aims to solve the problem of poor uniformity of products in the initial nucleation process of continuously growing metastable phase alpha-Ga2O3 in a Mist-CVD system in the prior art. The method comprises the following steps: constructing a three-dimensional model of the fog chemical vapor deposition system, and performing mesh generation on the three-dimensional model to generate a mesh file; importing the grid file into computational fluid mechanics simulation software, setting boundary conditions of a three-dimensional model, and selecting a multiphase flow solver; calculating the reaction in the three-dimensional model by using a multiphase flow solver; and analyzing the growth condition of alpha-Ga2O3 according to a calculation result, and the like. According to the method, the growth condition of