Enhanced field stitching with corrective chemistry

A method of patterning a substrate is described. The method includes the steps of: providing a resist layer on a substrate; subsequently exposing the resist to a first pattern of actinic radiation to form a latent image in the resist layer; and exposing the resist layer to a second pattern of actini...

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Bibliographic Details
Main Authors PETERSON BRENNAN, HUSTAD, PHILIP, D
Format Patent
LanguageChinese
English
Published 19.04.2024
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A method of patterning a substrate is described. The method includes the steps of: providing a resist layer on a substrate; subsequently exposing the resist to a first pattern of actinic radiation to form a latent image in the resist layer; and exposing the resist layer to a second pattern of actinic radiation to form a second latent image in the resist layer, wherein the first latent image is adjacent to the second latent image. The method further includes developing the resist layer to form a relief pattern, the relief pattern including a first set of trenches corresponding to the first pattern of actinic radiation and a second set of trenches corresponding to the second pattern of actinic radiation, where the first set of trenches and the second set of trenches are discontinuous. Next, the method includes coating the relief pattern with a solubility transition agent, then diffusing the solubility transition agent at a predetermined distance into the resist layer, where a solubility transition region of the
Bibliography:Application Number: CN202280057970