Single-ended sense amplifier with current pulse circuit

The invention relates to a single-ended sense amplifier with a current pulse circuit. Embodiments of the present disclosure provide memory circuits, sense amplifiers, and related methods for reading a resistive state in a memory device. The sense amplifier includes: a bit cell configurable in a high...

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Bibliographic Details
Main Authors DEVIDI DMITRY, CHINTU SANJAY KUMAR, JIANG CHUNSONG, PASUPULA SATISH
Format Patent
LanguageChinese
English
Published 19.04.2024
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Summary:The invention relates to a single-ended sense amplifier with a current pulse circuit. Embodiments of the present disclosure provide memory circuits, sense amplifiers, and related methods for reading a resistive state in a memory device. The sense amplifier includes: a bit cell configurable in a high or low resistance state; a sense circuit that detects a voltage drop across the bit cell in response to a read current applied during a read operation, and generates a high or low logic output at an output node; and a pulse generation circuit that increases the applied read current by the injected current pulse when detecting a transition of the resistance state of the bit cell from low to high. 本公开涉及具有电流脉冲电路的单端感测放大器。本公开的实施例提供了用于读取存储器器件中的电阻状态的存储器电路、感测放大器及相关方法。感测放大器包括:可被配置为高或低电阻状态的位基元;感测电路,其响应于在读取操作期间所施加的读取电流而检测跨位基元的电压降,并且在输出节点处产生高或低逻辑输出;以及脉冲产生电路,其在检测到位基元的电阻状态从低到高的过渡时通过注入的电流脉冲来增加所施加的读取电流。
Bibliography:Application Number: CN202311262706