Method for detecting infrared detector material

• Main Author: DENG FENGTAO
• Format: Patent
• Language: Chinese; English
• Published: 19.04.2024
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE; PHYSICS; TESTING

The invention discloses an infrared detector material detection method. The method comprises the following steps: detecting a crystal limit stress value of an infrared detector material by using an X-ray topography method, calculating an allowable stress value of a good crystal product according to the crystal limit stress value, and measuring and calculating the dislocation density of the infrared detector material after the infrared detector material is corroded, and determining whether the infrared detector material is qualified or not according to the allowable stress value of the good crystal product and the dislocation density. Therefore, waste of manpower, material resources and time cost in the manufacturing stage can be avoided. 本发明公开了一种红外探测器材料检测的方法。该方法包括：使用X射线形貌术方法检测红外探测器材料的晶体极限应力值，根据所述晶体极限应力值计算晶体良品许用应力值，将所述红外探测器材料腐蚀后测量并计算所述红外探测器材料的位错密度，根据所述晶体良品许用应力值和所述位错密度确定所述红外探测器材料是否合格，由此可以避免制作阶段造成人力、物力和时间成本的浪费。