Planar gate type MOSFET integrated with Schottky diode and preparation method of planar gate type MOSFET

• Main Authors: WEI JIN, WANG PEI-HSUAN
• Format: Patent
• Language: Chinese; English
• Published: 12.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a plane gate type MOSFET integrated with a Schottky diode and a preparation method of the plane gate type MOSFET, and belongs to the field of power electronic devices. The planar gate-type MOSFET integrated with the Schottky diode is manufactured in a mode similar to that of a traditional MOSFET, and only a gate forming process needs to be slightly modified: after a p-type base region and an n + source region are formed, a pseudo gate and a gate are separated through dry etching; the heavily doped p + region close to the grid electrode is in ohmic contact with the source electrode; the pseudo grid electrode is short-circuited with the source electrode; and a Schottky contact region is formed above the p-type base region beside the pseudo grid electrode and is in Schottky contact with the source electrode, so that a high electric field of the drain electrode is shielded, and leakage current is reduced. The built-in Schottky diode can effectively reduce minority carrier injection of a pa