Light emitting diode and light emitting device
The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode and a light-emitting device. The light-emitting diode comprises an epitaxial structure, a second bonding pad electrode and a first bonding pad electrode, wherein the epitaxial structu...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
09.04.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode and a light-emitting device. The light-emitting diode comprises an epitaxial structure, a second bonding pad electrode and a first bonding pad electrode, wherein the epitaxial structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked in sequence; wherein the surface of the second bonding pad electrode is provided with a wire bonding area, and the surface, located in the wire bonding area, of at least part of the second bonding pad electrode is of a concave-convex structure; and/or, the surface of the first bonding pad electrode is provided with a routing area, and the surface of at least part of the first bonding pad electrode located in the routing area is of a concave-convex structure; and the concave-convex structure comprises one or more convex parts and concave parts relative to the convex parts. Through the above design, the |
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Bibliography: | Application Number: CN202311797094 |