Low-power-consumption uni-traveling carrier photoelectric detector and preparation method thereof

The invention discloses a low-power consumption one-way carrier photoelectric detector and a preparation method thereof, the detector adopts a GaAsSb/InP material system, and the detector sequentially comprises a P-type contact layer, a barrier layer, an absorption layer, a depletion absorption laye...

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Bibliographic Details
Main Authors ZHANG BOLIN, HUANG GENGRONG, JIN YUNJIANG
Format Patent
LanguageChinese
English
Published 09.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a low-power consumption one-way carrier photoelectric detector and a preparation method thereof, the detector adopts a GaAsSb/InP material system, and the detector sequentially comprises a P-type contact layer, a barrier layer, an absorption layer, a depletion absorption layer, a cliff layer, a collection layer, an N-type auxiliary collection layer, an N-type contact layer and a substrate from top to bottom. The device has the advantages of high responsivity and low preparation difficulty. 本发明公开了一种低功耗的单行载流子光电探测器及其制备方法，所述探测器采用的是GaAsSb/InP材料体系，所述探测器由上至下依次为P型接触层、阻挡层、吸收层、耗尽吸收层、崖层、收集层、N型副收集层、N型接触层以及衬底。本发明器件具有响应度较高且制备难度较低的优势。
Bibliography:Application Number: CN202410024104