Overlay measurement method

The invention discloses an overlay measurement method in which an overlay mark having a programmed overlay value is provided. The overlay mark is scanned with an electron beam to obtain a voltage contrast image. A defect function that varies according to the overlap value is obtained from the voltag...

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Bibliographic Details
Main Authors LEE SEUNG-YUN, GUO RENHAO, PARK DO-HYUN, HAN YE-EUN, KIM JIN-SUN, LEE JUNG-JIN, HUANG CAN, LI MAOSONG
Format Patent
LanguageChinese
English
Published 09.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses an overlay measurement method in which an overlay mark having a programmed overlay value is provided. The overlay mark is scanned with an electron beam to obtain a voltage contrast image. A defect function that varies according to the overlap value is obtained from the voltage-contrast image data. Self-cross-correlation is performed on the defect function to determine an overlap. 本发明公开一种重叠测量方法，在该重叠测量方法中，提供具有编程的重叠值的重叠标记。用电子束扫描重叠标记以获得电压对比图像。从电压对比图像数据获得根据重叠值而变化的缺陷函数。对缺陷函数执行自互相关以确定重叠。
Bibliography:Application Number: CN202311280807