Semiconductor element and manufacturing method thereof

• Main Authors: WANG HUILIN, XU QINGHUA, ZHANG JINGYIN, WENG CHENYI
• Format: Patent
• Language: Chinese; English
• Published: 05.04.2024
• Subjects: ELECTRICITY

The invention discloses a semiconductor element and a manufacturing method thereof, and the method for manufacturing the semiconductor element mainly comprises the steps: forming an intermetallic dielectric layer on a substrate, then forming a metal interconnecting line in the intermetallic dielectric layer, forming a magnetic tunneling junction (MTJ) on the metal interconnecting line, then carrying out a trimming manufacturing process to shape the MTJ, and finally, carrying out the trimming manufacturing process on the MTJ. The MTJ includes a first slope and a second slope, and the first slope is smaller than the second slope. 本发明公开一种半导体元件及其制作方法，其中该制作半导体元件的方法为，主要先形成一金属间介电层于基底上，然后形成一金属内连线于该金属间介电层内，形成一磁性隧穿结(magnetic tunneling junction,MTJ)于该金属内连线上，再进行一修整制作工艺对该MTJ进行整形，使MTJ包含第一斜率以及第二斜率且第一斜率小于第二斜率。