Metal deposition and etch in high aspect ratio features

• Main Authors: REDDY RAVISEKHARA POCHIMIREDDY, WANG BAIWEI, WANG ANCHUAN, CUI ZHENJIANG, CHEN, XIN, C
• Format: Patent
• Language: Chinese; English
• Published: 26.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An exemplary etching method may include flowing a fluorine-containing precursor and an auxiliary gas into a processing region of a semiconductor processing chamber. The auxiliary gas may be or include oxygen or nitrogen. The flow rate ratio of the fluorine-containing precursor to the auxiliary gas m...