Metal deposition and etch in high aspect ratio features

• Main Authors: REDDY RAVISEKHARA POCHIMIREDDY, WANG BAIWEI, WANG ANCHUAN, CUI ZHENJIANG, CHEN, XIN, C
• Format: Patent
• Language: Chinese; English
• Published: 26.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An exemplary etching method may include flowing a fluorine-containing precursor and an auxiliary gas into a processing region of a semiconductor processing chamber. The auxiliary gas may be or include oxygen or nitrogen. The flow rate ratio of the fluorine-containing precursor to the auxiliary gas may be greater than or about 1: 1. The method may include contacting a substrate with a fluorine-containing precursor and an auxiliary gas. The substrate may include an exposed metal. The substrate may define a high aspect ratio structure. The method may include etching the exposed metal within the high aspect ratio structure. 示例性的蚀刻方法可以包括使含氟前驱物和辅助气体流入半导体处理腔室的处理区域中。辅助气体可以是或包括氧气或氮气。含氟前驱物与辅助气体的流速比可大于或约为1:1。该方法可包括使基板与含氟前驱物和辅助气体接触。基板可以包括经暴露金属。基板可限定高深宽比结构。该方法可以包括蚀刻高深宽比结构内的经暴露金属。