Method for accurately measuring impurity content in vanadium pentoxide by ICP-AES

• Main Authors: LYU HUI, LIU LIYING, ZHANG HE, LIU GUANGWEI, ZHU JIANYAN, JIANG KAIYANG, LIU LISHAN, ZHANG QINGGUO
• Format: Patent
• Language: Chinese; English
• Published: 26.03.2024
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

The invention belongs to the technical field of metallurgical chemical analysis, and particularly discloses a method for accurately determining the content of impurities in vanadium pentoxide by ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry), which specifically comprises the following steps: digesting a vanadium pentoxide sample under the condition of mixed acid of hydrochloric acid and nitric acid, cooling, diluting, quantitatively adding Ca, Cr, Al, Fe, B, Y, Zn, Sn and Bi standard solutions and a complexing agent into the diluent, uniformly mixing, and metering the volume; and then determining the content values of Ca, Cr, Al, Fe, B, Y, Zn, Sn and Bi elements by using an inductively coupled plasma emission spectrometer and selecting a proper wavelength. Compared with an existing analysis method without adding a complexing agent, the technical scheme provided by the invention has the advantage that the adding standard recovery rate can be improved by 3%. 本发明属于冶金化学分析技术领域，具体公开一种ICP-AES准确测定五