Copper-molybdenum alloy wire rod for electronic device, manganese plating process of copper-molybdenum alloy wire rod and manganese plating solution

• Main Authors: LIU YONGLIN, ZHAO JINGCAI, WANG HONGZHI
• Format: Patent
• Language: Chinese; English
• Published: 26.03.2024
• Subjects: ALLOYS; APPARATUS THEREFOR; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL; CASTING; CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS; CHEMISTRY; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; FERROUS OR NON-FERROUS ALLOYS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUSMETALS OR ALLOYS; MAKING METAL MALLEABLE BY DECARBURISATION, TEMPERING OR OTHERTREATMENTS; MAKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING; MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL; METALLURGY; METALLURGY OF IRON; MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; PERFORMING OPERATIONS; POWDER METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; PUNCHING METAL; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; WORKING METALLIC POWDER

The invention relates to a copper-molybdenum alloy wire for an electronic device, a manganese plating process of the copper-molybdenum alloy wire and a manganese plating solution. According to the copper-molybdenum alloy and the wire rod, the copper-molybdenum alloy wire rod which is suitable for high-end electronic devices, especially high-power IGBT (Insulated Gate Bipolar Translator) semiconductor module flat cables is provided. According to the wire rod, Mo particles and distribution in the CuMo alloy are effectively controlled through a specific static pressure preparation process, and protection of the Mn coating on the wire rod and the service life of the wire rod are remarkably improved through a specific Mn plating and surface proper corrosion process. 本发明涉及一种用于电子器件的铜钼合金线材、其镀锰的工艺及镀锰液。根据本发明的铜钼合金及线材，提供了适用于高端电子器件，特别是大功率IGBT半导体模块排线的铜钼合金线材。该线材通过特定的静压制备工艺，有效地控制了CuMo合金中的Mo颗粒及分布，并且通过特定的镀Mn和表面适当腐蚀工艺，显著改善了Mn镀层的对于线材的保护及其使用寿命。