Formula and application of etching solution

• Main Authors: SHANG YUFEI, TANG HAODONG, WANG ZHIYANG
• Format: Patent
• Language: Chinese; English
• Published: 26.03.2024
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

The invention provides a formula and application of an etching solution, the formula of the etching solution comprises the following components in percentage by weight: 30-35% of ammonium fluoride, 4-8% of hydrofluoric acid, 3-5% of hydrogen chloride, 0.1-0.25% of a surfactant and the balance of ultrapure water, and the surfactant comprises fluorine-containing alcohol and fluorine-containing carboxylic acid. The fluorine-containing alcohol and the fluorine-containing carboxylic acid are combined to serve as the surfactant, so that the contact angle of the etching liquid can be reduced, and the wettability of the etching liquid is improved. The etching solution has the advantages of excellent wettability, low surface tension and few bubbles, can uniformly etch a silicon dioxide film under photoresist, does not generate silicon dioxide residues, has no influence on the photoresist, and has a very good application prospect. 本发明提供了一种蚀刻液的配方及其应用，所述蚀刻液的配方由如下重量百分比的组分组成：氟化铵30~35%，氢氟酸4~8%，氯化氢3~5%，表面活性剂0.1~0.25%，余量为超纯水，