Semiconductor device

• Main Authors: MIZUKAMI MAKOTO, ADACHI YUTO, HORI YOICHI
• Format: Patent
• Language: Chinese; English
• Published: 22.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments relate to a semiconductor device. According to one embodiment, a semiconductor device includes: a first electrode; a first semiconductor layer of a first conductivity type disposed on the first electrode; a second semiconductor layer of a second conductivity type disposed on a portion of the first semiconductor layer; a metal layer disposed on the first semiconductor layer and the second semiconductor layer, the metal layer being Schottky-bonded to the first semiconductor layer; a second electrode disposed on the metal layer; a bonding member connected to an upper surface of the second electrode; and a conductive member disposed between the second semiconductor layer and the metal layer and made of a material different from that of the metal layer, the area ratio in a region directly below the bonding member being higher than the area ratio in a region other than the region directly below the bonding member. 实施方式涉及半导体装置。实施方式的半导体装置具备：第一电极；第一导电型的第一半导体层，配置在所述第一电极上；第二导电型的第二半导体层，配置在所述第一半导体层上的一部分；金属层，配置