Semiconductor element

• Main Author: CHAE JIN WOO
• Format: Patent
• Language: Chinese; English
• Published: 22.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor device. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The gate structure includes a lower gate electrode, an upper gate electrode disposed on the lower gate electrode, a silicification layer in contact with the upper gate electrode, and a lower dielectric layer disposed between the lower gate electrode and the substrate. The lower gate electrode and the upper gate electrode are configured to receive different voltages, and the gate structure is disposed in an active region of the substrate. 本申请提供一种半导体元件，其包括具有一沟槽的一基底以及该沟槽中的一栅极结构。该栅极结构包括一下栅极电极，设置于该下栅极电极上的一上栅极电极，与该上栅极电极接触的一硅化层，以及设置于该下栅极电极与该基底之间的一下介电层。该下栅极电极及该上栅极电极经配置以接收不同的电压，以及该栅极结构设置于该基底的一主动区中。