Method for depositing silicon carbide on surface of zirconium alloy cladding tube at low temperature based on PECVD (Plasma Enhanced Chemical Vapor Deposition) technology

• Main Authors: LI YANG, WANG XUANLI, SONG XIWEN
• Format: Patent
• Language: Chinese; English
• Published: 22.03.2024
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention belongs to the field of nuclear fuel components and manufacturing thereof, and particularly relates to a method for depositing silicon carbide on the surface of a zirconium alloy cladding tube at a low temperature based on a PECVD (Plasma Enhanced Chemical Vapor Deposition) technology, which comprises the following steps: placing the zirconium alloy cladding tube subjected to surface pretreatment in a PECVD deposition chamber, and preheating to a deposition temperature; the surface of the zirconium alloy cladding tube is cleaned through plasma discharge; and then CH3SiH3 gas is introduced into the deposition chamber, and silicon carbide is deposited on the surface of the zirconium alloy cladding tube at the temperature of 500-600 DEG C through radio frequency sputtering. According to the method, CH3SiH3 serves as the only gas source for silicon carbide deposition on the basis of the PECVD technology, the silicon carbide coating can be directly deposited on the surface of the zirconium alloy clad