Ultraviolet light emitting diode and light emitting device

• Main Authors: PAN ZIYAN, LAN YONGLING, ZHANG ZHONGYING, LONG SIYI, ZENG WEIJUN, ZANG YASHU, XU JIN, CHEN SIHE, YANG ZHONGJIE, HUANG SHAOHUA, CHEN GONG, ZHANG WEI, ZHANG GUOHUA
• Format: Patent
• Language: Chinese; English
• Published: 19.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to the technical field of semiconductor manufacturing, in particular to an ultraviolet light-emitting diode which comprises a semiconductor lamination layer and a metal lamination layer located on the semiconductor lamination layer, and the metal lamination layer sequentially comprises a first adhesion layer, a metal coupling layer, a heat conduction layer and a second adhesion layer from bottom to top. The metal coupling layer comprises a flat layer and a barrier layer, the surface structure, close to the heat conduction layer, of the metal coupling layer is the barrier layer, the surface structure, close to the first adhesion layer, of the metal coupling layer is the flat layer, the material of the flat layer has a first thermal expansion coefficient, and the material of the barrier layer has a second thermal expansion coefficient; the first coefficient of thermal expansion is less than the second coefficient of thermal expansion. By means of the arrangement, the metal internal stress