Capacitor structure and semiconductor device including same

• Main Authors: LIM HAN-JIN, JEON IN-TAK, PARK JEONG-MIN, JUNG HYUNGSUK
• Format: Patent
• Language: Chinese; English
• Published: 19.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A capacitor structure includes a first lower conductive pattern, a first capacitor, a first upper conductive pattern, a second lower conductive pattern, a second capacitor, and a second upper conductive pattern. The first capacitor includes a first lower electrode, a first upper electrode, and a first dielectric structure. Each first dielectric structure is disposed between one of the first lower electrodes and a corresponding one of the first upper electrodes. A first upper conductive pattern is formed on and electrically connected to the first upper electrode. The second lower conductive pattern is spaced apart from the first lower conductive pattern disposed on the substrate. The second capacitor includes a second lower electrode, a second upper electrode, and a second dielectric structure. A second upper conductive pattern is formed on and electrically connected to the second upper electrode. The first conductive pattern and the second conductive pattern are electrically insulated from each other. 一种电容器结构