Preparation method of semiconductor structure

• Main Author: FANG WEIQUAN
• Format: Patent
• Language: Chinese; English
• Published: 19.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a preparation method of a semiconductor structure. The preparation method comprises the following steps: forming a conductive layer on a substrate; forming a first ashing hard mask on the conductive layer, wherein a stress of the first ashing hard mask is from about-100 MPa to about 100 MPa; forming a first dielectric anti-reflective coating on the first ashing hard mask; forming a second ashing hard mask on the first dielectric anti-reflective coating layer; etching the first ashing hard mask, the first dielectric anti-reflective coating, and the second ashing hard mask to transfer a first pattern to at least the first ashing hard mask; etching the conductive layer according to the first ashing hard mask to form a patterned conductive layer; forming a porous dielectric layer on the conductive layer; and etching the porous dielectric layer with the first ashing hard mask having the first pattern as a mask. 本公开提供一种半导体结构的制备方法，包括：形成一导电层在一基底上；形成一第一可灰化硬遮罩在该导电层上，其中该第一可灰化硬遮罩的一应力从大约-100MPa到大约10