Non-volatile memory device and corresponding operating method

The embodiment of the invention relates to a nonvolatile memory device and a corresponding operation method. In a non-volatile memory device, a memory sector is provided. The memory sector includes a plurality of tiles arranged horizontally. Each tile includes a plurality of memory cells internally...

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Bibliographic Details
Main Authors RUSSO VINCENZO, CONTE ANTONINO, MACCARRONE AGATINO MASSIMO, JOUANNEAU THOMAS, TOMAIUOLO FRANCESCO
Format Patent
LanguageChinese
English
Published 15.03.2024
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The embodiment of the invention relates to a nonvolatile memory device and a corresponding operation method. In a non-volatile memory device, a memory sector is provided. The memory sector includes a plurality of tiles arranged horizontally. Each tile includes a plurality of memory cells internally arranged in a horizontal word line and a vertical bit line. The pre-decoder is configured to receive the encoded address signal set to generate a pre-decoded signal. The central row decoder is arranged to be aligned with the plurality of tiles, receives the pre-decoded signal, and generates a level-shifted pull-up drive signal and a level-shifted pull-down drive signal for driving the word lines. A first buffer circuit is arranged on a first side of each tile. Each of the first buffer circuits is coupled to a respective word line, receives a level-shifted pull-up drive signal and a level-shifted pull-down drive signal, and selectively pulls up or pulls down the respective word line according to a value of the recei
Bibliography:Application Number: CN202311177862