Semiconductor device structures isolated by porous semiconductor material

• Main Authors: STEVEN M. SHANK, ABOU-KHALIL, MOHAMED, MCTAGGART SEAN, KRISHNASAMY RAVIKUMAR, LEYDEN-NUFFER, MICHAU L, VALETTE, ALAIN
• Format: Patent
• Language: Chinese; English
• Published: 12.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a semiconductor device structure isolated by a porous semiconductor material. Semiconductor device structures with device isolation and methods of forming semiconductor device structures with device isolation are provided. The structure includes a semiconductor substrate, a first semiconductor layer on the semiconductor substrate, a second semiconductor layer in a cavity in the first semiconductor layer, and a device structure including a doped region in the second semiconductor layer. The first semiconductor layer includes a porous semiconductor material, and the second semiconductor layer includes a single crystal semiconductor material. 本发明涉及由多孔半导体材料隔离的半导体装置结构，提供具有装置隔离的半导体装置结构以及形成具有装置隔离的半导体装置结构的方法。该结构包括半导体衬底、位于该半导体衬底上的第一半导体层、位于该第一半导体层中的腔体中的第二半导体层，以及包括位于该第二半导体层中的掺杂区的装置结构。该第一半导体层包括多孔半导体材料，且该第二半导体层包括单晶半导体材料。