PUF generation method based on MRAM and PUF

• Main Authors: HAN GUCHANG, YANG XIAOLEI, HAO WUYANG
• Format: Patent
• Language: Chinese; English
• Published: 12.03.2024
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention discloses an MRAM (Magnetic Random Access Memory)-based PUF (Physical Unclonable Function) generation method and a PUF, which are applied to the technical field of computer chip security, and comprise the following steps: controlling the average value of a static bias magnetic field of an MTJ (Magnetic Tunnel Junction) free layer in a target MRAM to be 0Oe; controlling the free layer magnetic moment of each MTJ in the target MRAM to be in an unstable state; and when the average value of the static bias magnetic field of the free layer of the MTJ is 0Oe, controlling the MTJ to be separated from an unstable state, so that the free layer determines the magnetic moment direction, and generating a PUF (Physical Unclonable Function). The average value of the bias field of the MTJ in the target MRAM is controlled to be 0 Oe, and then the magnetic field in the free layer of the MTJ is in an unstable state. And when the unstable state is released and the magnetic field in the free layer is changed to be