Semiconductor device

A semiconductor device includes: a substrate including a cell region and a peripheral region and a boundary region therebetween; a lower insulating layer on the cell region and extending onto the boundary region and the peripheral region; a data storage pattern on the lower insulating layer on the c...

Full description

Saved in:
Bibliographic Details
Main Authors SHIN HYUNOL, HYUN JA-YOUNG, KIM JOON-HOI
Format Patent
LanguageChinese
English
Published 08.03.2024
Subjects
Online AccessGet full text

Cover

Loading…
Abstract A semiconductor device includes: a substrate including a cell region and a peripheral region and a boundary region therebetween; a lower insulating layer on the cell region and extending onto the boundary region and the peripheral region; a data storage pattern on the lower insulating layer on the cell region; a cell insulating layer on the lower insulating layer on the cell region and on the data storage pattern; a first upper insulating layer on the unit insulating layer; a peripheral conductive line on the lower insulating layer on the peripheral region; and a peripheral insulating layer on the lower insulating layer on the peripheral region and on the peripheral conductive line. The peripheral insulating layer extends onto the lower insulating layer on the boundary region to contact a side surface of the unit insulating layer and a side surface of the first upper insulating layer. The peripheral insulating layer includes a different material than the unit insulating layer. 一种半导体器件包括:基板,包括单元区和外围区以及在它们之间的边界
AbstractList A semiconductor device includes: a substrate including a cell region and a peripheral region and a boundary region therebetween; a lower insulating layer on the cell region and extending onto the boundary region and the peripheral region; a data storage pattern on the lower insulating layer on the cell region; a cell insulating layer on the lower insulating layer on the cell region and on the data storage pattern; a first upper insulating layer on the unit insulating layer; a peripheral conductive line on the lower insulating layer on the peripheral region; and a peripheral insulating layer on the lower insulating layer on the peripheral region and on the peripheral conductive line. The peripheral insulating layer extends onto the lower insulating layer on the boundary region to contact a side surface of the unit insulating layer and a side surface of the first upper insulating layer. The peripheral insulating layer includes a different material than the unit insulating layer. 一种半导体器件包括:基板,包括单元区和外围区以及在它们之间的边界
Author KIM JOON-HOI
SHIN HYUNOL
HYUN JA-YOUNG
Author_xml – fullname: SHIN HYUNOL
– fullname: HYUN JA-YOUNG
– fullname: KIM JOON-HOI
BookMark eNrjYmDJy89L5WQQCU7NzUzOz0spTS7JL1JISS3LTE7lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhuZm5uZGBsaOxsSoAQAkdyKs
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate 半导体器件
ExternalDocumentID CN117677203A
GroupedDBID EVB
ID FETCH-epo_espacenet_CN117677203A3
IEDL.DBID EVB
IngestDate Fri Aug 02 09:01:44 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_CN117677203A3
Notes Application Number: CN202311075199
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240308&DB=EPODOC&CC=CN&NR=117677203A
ParticipantIDs epo_espacenet_CN117677203A
PublicationCentury 2000
PublicationDate 20240308
PublicationDateYYYYMMDD 2024-03-08
PublicationDate_xml – month: 03
  year: 2024
  text: 20240308
  day: 08
PublicationDecade 2020
PublicationYear 2024
RelatedCompanies SAMSUNG ELECTRONICS CO., LTD
RelatedCompanies_xml – name: SAMSUNG ELECTRONICS CO., LTD
Score 3.663625
Snippet A semiconductor device includes: a substrate including a cell region and a peripheral region and a boundary region therebetween; a lower insulating layer on...
SourceID epo
SourceType Open Access Repository
SubjectTerms ELECTRICITY
Title Semiconductor device
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240308&DB=EPODOC&locale=&CC=CN&NR=117677203A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMbVINLRIS07SNUhLs9A1SUsG5jlTM2PdRGDTO9ksxSQ5DTx77utn5hFq4hVhGsHEkAXbCwM-J7QcfDgiMEclA_N7Cbi8LkAMYrmA11YW6ydlAoXy7d1CbF3UoL1j0OFyBhZqLk62rgH-Lv7Oas7Ots5-an5BtoaG5mbmoClHR2YGVlAzGnTOvmuYE2hXSgFyleImyMAWADQtr0SIgakqQ5iB0xl285owA4cvdMIbyITmvWIRBpFg0Dr2_DzQAa35RQopqaA8Lsqg6OYa4uyhCzQ-Hu6XeGc_hEuMxRhYgH38VAkGhUTjFGMT4yRzYzNLSxPQCemWSUaJicC8YmSYaJ5iaSTJIIXbHCl8ktIMXKBwAS-bspBhYCkpKk2VBdajJUly4AAAAESydUk
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMbVINLRIS07SNUhLs9A1SUsG5jlTM2PdRGDTO9ksxSQ5DTx77utn5hFq4hVhGsHEkAXbCwM-J7QcfDgiMEclA_N7Cbi8LkAMYrmA11YW6ydlAoXy7d1CbF3UoL1j0OFyBhZqLk62rgH-Lv7Oas7Ots5-an5BtoaG5mbmoClHR2YGVnPQ6bygplOYE2hXSgFyleImyMAWADQtr0SIgakqQ5iB0xl285owA4cvdMIbyITmvWIRBpFg0Dr2_DzQAa35RQopqaA8Lsqg6OYa4uyhCzQ-Hu6XeGc_hEuMxRhYgH38VAkGhUTjFGMT4yRzYzNLSxPQCemWSUaJicC8YmSYaJ5iaSTJIIXbHCl8kvIMnB4hvj7xPp5-3tIMXKAwAi-hspBhYCkpKk2VBdapJUly4MAAAOhdeDY
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device&rft.inventor=SHIN+HYUNOL&rft.inventor=HYUN+JA-YOUNG&rft.inventor=KIM+JOON-HOI&rft.date=2024-03-08&rft.externalDBID=A&rft.externalDocID=CN117677203A