Semiconductor device
A semiconductor device includes: a substrate including a cell region and a peripheral region and a boundary region therebetween; a lower insulating layer on the cell region and extending onto the boundary region and the peripheral region; a data storage pattern on the lower insulating layer on the c...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
08.03.2024
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A semiconductor device includes: a substrate including a cell region and a peripheral region and a boundary region therebetween; a lower insulating layer on the cell region and extending onto the boundary region and the peripheral region; a data storage pattern on the lower insulating layer on the cell region; a cell insulating layer on the lower insulating layer on the cell region and on the data storage pattern; a first upper insulating layer on the unit insulating layer; a peripheral conductive line on the lower insulating layer on the peripheral region; and a peripheral insulating layer on the lower insulating layer on the peripheral region and on the peripheral conductive line. The peripheral insulating layer extends onto the lower insulating layer on the boundary region to contact a side surface of the unit insulating layer and a side surface of the first upper insulating layer. The peripheral insulating layer includes a different material than the unit insulating layer.
一种半导体器件包括:基板,包括单元区和外围区以及在它们之间的边界 |
---|---|
AbstractList | A semiconductor device includes: a substrate including a cell region and a peripheral region and a boundary region therebetween; a lower insulating layer on the cell region and extending onto the boundary region and the peripheral region; a data storage pattern on the lower insulating layer on the cell region; a cell insulating layer on the lower insulating layer on the cell region and on the data storage pattern; a first upper insulating layer on the unit insulating layer; a peripheral conductive line on the lower insulating layer on the peripheral region; and a peripheral insulating layer on the lower insulating layer on the peripheral region and on the peripheral conductive line. The peripheral insulating layer extends onto the lower insulating layer on the boundary region to contact a side surface of the unit insulating layer and a side surface of the first upper insulating layer. The peripheral insulating layer includes a different material than the unit insulating layer.
一种半导体器件包括:基板,包括单元区和外围区以及在它们之间的边界 |
Author | KIM JOON-HOI SHIN HYUNOL HYUN JA-YOUNG |
Author_xml | – fullname: SHIN HYUNOL – fullname: HYUN JA-YOUNG – fullname: KIM JOON-HOI |
BookMark | eNrjYmDJy89L5WQQCU7NzUzOz0spTS7JL1JISS3LTE7lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhuZm5uZGBsaOxsSoAQAkdyKs |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 半导体器件 |
ExternalDocumentID | CN117677203A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_CN117677203A3 |
IEDL.DBID | EVB |
IngestDate | Fri Aug 02 09:01:44 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_CN117677203A3 |
Notes | Application Number: CN202311075199 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240308&DB=EPODOC&CC=CN&NR=117677203A |
ParticipantIDs | epo_espacenet_CN117677203A |
PublicationCentury | 2000 |
PublicationDate | 20240308 |
PublicationDateYYYYMMDD | 2024-03-08 |
PublicationDate_xml | – month: 03 year: 2024 text: 20240308 day: 08 |
PublicationDecade | 2020 |
PublicationYear | 2024 |
RelatedCompanies | SAMSUNG ELECTRONICS CO., LTD |
RelatedCompanies_xml | – name: SAMSUNG ELECTRONICS CO., LTD |
Score | 3.663625 |
Snippet | A semiconductor device includes: a substrate including a cell region and a peripheral region and a boundary region therebetween; a lower insulating layer on... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | ELECTRICITY |
Title | Semiconductor device |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240308&DB=EPODOC&locale=&CC=CN&NR=117677203A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMbVINLRIS07SNUhLs9A1SUsG5jlTM2PdRGDTO9ksxSQ5DTx77utn5hFq4hVhGsHEkAXbCwM-J7QcfDgiMEclA_N7Cbi8LkAMYrmA11YW6ydlAoXy7d1CbF3UoL1j0OFyBhZqLk62rgH-Lv7Oas7Ots5-an5BtoaG5mbmoClHR2YGVlAzGnTOvmuYE2hXSgFyleImyMAWADQtr0SIgakqQ5iB0xl285owA4cvdMIbyITmvWIRBpFg0Dr2_DzQAa35RQopqaA8Lsqg6OYa4uyhCzQ-Hu6XeGc_hEuMxRhYgH38VAkGhUTjFGMT4yRzYzNLSxPQCemWSUaJicC8YmSYaJ5iaSTJIIXbHCl8ktIMXKBwAS-bspBhYCkpKk2VBdajJUly4AAAAESydUk |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMbVINLRIS07SNUhLs9A1SUsG5jlTM2PdRGDTO9ksxSQ5DTx77utn5hFq4hVhGsHEkAXbCwM-J7QcfDgiMEclA_N7Cbi8LkAMYrmA11YW6ydlAoXy7d1CbF3UoL1j0OFyBhZqLk62rgH-Lv7Oas7Ots5-an5BtoaG5mbmoClHR2YGVnPQ6bygplOYE2hXSgFyleImyMAWADQtr0SIgakqQ5iB0xl285owA4cvdMIbyITmvWIRBpFg0Dr2_DzQAa35RQopqaA8Lsqg6OYa4uyhCzQ-Hu6XeGc_hEuMxRhYgH38VAkGhUTjFGMT4yRzYzNLSxPQCemWSUaJicC8YmSYaJ5iaSTJIIXbHCl8kvIMnB4hvj7xPp5-3tIMXKAwAi-hspBhYCkpKk2VBdapJUly4MAAAOhdeDY |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device&rft.inventor=SHIN+HYUNOL&rft.inventor=HYUN+JA-YOUNG&rft.inventor=KIM+JOON-HOI&rft.date=2024-03-08&rft.externalDBID=A&rft.externalDocID=CN117677203A |