Semiconductor device, method for manufacturing semiconductor device, and power conversion device

• Main Authors: SUZUKI KENJI, MINAMITAKE HARUHIKO, KOKETSU HIDENORI, HARAGUCHI YUKI, HOSHI TAIKI, MIYATA YUSUKE
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2024
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRIC ELEMENTS; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; SEMICONDUCTOR DEVICES

Provided are a semiconductor device capable of suppressing deterioration of energy loss and a method for manufacturing the same. The invention also relates to a power conversion device. The semiconductor device includes: a drift layer of a first conductivity type provided between a first main surface and a second main surface of a semiconductor substrate having the first main surface and the second main surface facing the first main surface; and a field blocking layer of a first conductivity type provided between the drift layer and the second main surface, the field blocking layer having an impurity concentration higher than an impurity concentration of the drift layer, the field blocking layer having at least one peak value greater than or equal to one in a substantial carrier concentration distribution at room temperature from the second main surface toward the first main surface, and the field blocking layer being provided between the drift layer and the first main surface. The carrier concentration distr