Formation method of semiconductor structure

• Main Authors: SONG JIA, CHONG ERMIN, SI JIN, YU TAO, ZHANG HAIYANG
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for forming a semiconductor structure comprises the following steps: providing a substrate which comprises a device region and an isolation region; fin parts located on the substrate in the device region and the isolation region are formed, the fin parts in the device region are device fin parts, the fin parts in the isolation region are pseudo fin parts, and the removal process of the pseudo fin parts has an etching selection ratio between the pseudo fin parts and the substrate; and removing the dummy fin part. 一种半导体结构的形成方法，包括：提供衬底，所述衬底包括器件区和隔离区；形成位于所述器件区和隔离区的所述衬底上的鳍部，所述器件区中的所述鳍部为器件鳍部，所述隔离区中的所述鳍部为伪鳍部，且所述伪鳍部的去除工艺对所述伪鳍部与所述衬底之间具有刻蚀选择比；去除所述伪鳍部。