Brain-like perception optical sensor based on ferroelectric material

The invention discloses a brain-like perception optical sensor based on a ferroelectric material, which comprises a bottom electrode, a top electrode and an optical response layer located between the bottom electrode and the top electrode, and the optical response layer is a ferroelectric insulator...

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Bibliographic Details
Main Authors GUAN KEJIE, WANG XIAOWEI, FENG SIMIN, SUN FUQIN, LI YINXIAO, ZHANG TING
Format Patent
LanguageChinese
English
Published 01.03.2024
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Summary:The invention discloses a brain-like perception optical sensor based on a ferroelectric material, which comprises a bottom electrode, a top electrode and an optical response layer located between the bottom electrode and the top electrode, and the optical response layer is a ferroelectric insulator material layer or a ferroelectric semiconductor material layer. According to the invention, the polarization effect of the ferroelectric material is utilized, the light responsivity of the sensor can realize nonvolatile tuning through ferroelectric polarization, the reconfigurable and wide-spectrum light response can be realized by selecting a material with a proper band gap, the nonvolatile tuning of the light responsivity can be realized without continuously applying voltage, and the power consumption of the device is reduced. 本发明公开了一种基于铁电材料的类脑感知光传感器,包括底电极、顶电极以及位于底电极和顶电极之间的光响应层,所述光响应层为铁电绝缘体材料层或铁电半导体材料层。本发明利用铁电材料的极化效应,传感器的光响应度可以通过铁电极化实现非易失性的调谐,通过选择合适带隙的材料实现可重构、宽波谱的光响应,无需持续施加电压就可以实现对光响应度的非易失性调谐,降低器件的功耗。
Bibliography:Application Number: CN202311547509