Use of composition for selectively etching silicon and method for selectively etching silicon

The present invention relates to the use of a composition for selectively etching a silicon layer in the presence of a layer comprising a silicon germanium alloy, the composition comprising: (a) from 4% to 15% by weight of an amine of formula (E1), and (b) water; wherein XE1, XE1, XE1 are independen...

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Bibliographic Details
Main Authors LOPEZ VILLANUEVA FRANCISCO JAVIER, HILDEBRANDT STEFAN, KLIPP ANDREAS
Format Patent
LanguageChinese
English
Published 27.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to the use of a composition for selectively etching a silicon layer in the presence of a layer comprising a silicon germanium alloy, the composition comprising: (a) from 4% to 15% by weight of an amine of formula (E1), and (b) water; wherein XE1, XE1, XE1 are independently selected from a chemical bond and a C1-C6 alkanediyl group; yE is selected from the group consisting of N, CRE1, and P; rE1 is selected from H and C1-C6 alkyl groups. # imgabs0 # 本发明涉及组合物用于在包含硅锗合金的层的存在下选择性蚀刻硅层的用途，该组合物包含：(a)按重量计4％至15％的具有式(E1)的胺，和(b)水；其中XE1、XE1、XE1独立地选自化学键和C1-C6烷二基；YE选自N、CRE1、和P；RE1选自H和C1-C6烷基。#imgabs0#
Bibliography:Application Number: CN202280047954