Method for decoupling source of variation associated with semiconductor manufacturing

• Main Authors: FREEMAN JAMES EDWARD, JAIN VIVEK K, PAACHER KARL-FRIEDRICH, TEL WIM TJIBBO
• Format: Patent
• Language: Chinese; English
• Published: 27.02.2024
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

A method for determining process drift or anomalous value wafers over time in semiconductor fabrication is described herein. The method includes obtaining a key performance indicator (KPI) change (e.g., LCDU) that characterizes performance of the semiconductor process over time, and data associated with a set of factors associated with the semiconductor process. A model of the KPI and the data is used to determine a contribution of a first set of factors to a change in the KPI, the first set of factors breaking through a statistical threshold. The contribution to the KPI change from the first set of factors is removed from the model to obtain a residual KPI change. Based on the residual KPI change, a residual value that breaks through the residual threshold is determined. The residual value indicates a process drift over time in the semiconductor process or an anomalous substrate corresponding to the residual value at a particular time. 本文中描述了一种用于确定半导体制造时随时间的工艺漂移或异常值晶片的方法。该方法包括：获得表征半导体工艺随时间的性能的关键性能指标(KPI)变化(例