Inverted QLED and preparation method thereof

The invention provides an inverted QLED device and a preparation method thereof. The inverted QLED device comprises an ITO layer, an electron transport layer, a quantum dot light-emitting layer, a mixed transport layer and a cathode which are sequentially stacked. Materials of the mixed transmission...

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Bibliographic Details
Main Authors HAO LIQIANG, MA ZHONGSHENG, WU YUANYUAN, LIU HONGJUN, CAO RONG, MU XINJU, TANG PENGYU, GAO YUDI
Format Patent
LanguageChinese
English
Published 27.02.2024
Subjects
ELECTRICITY
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Summary:The invention provides an inverted QLED device and a preparation method thereof. The inverted QLED device comprises an ITO layer, an electron transport layer, a quantum dot light-emitting layer, a mixed transport layer and a cathode which are sequentially stacked. Materials of the mixed transmission layer comprise a hole transmission material and an electron transmission layer material. Through the design of the inverted QLED device structure and the design of the mixed transmission layer, the inverted QLED device which is high in device efficiency and good in device working stability is prepared. 本发明提供一种倒置QLED器件及其制备方法。所述倒置QLED器件包括依次层叠设置的ITO层、电子传输层、量子点发光层、混合传输层和阴极；所述混合传输层的材料包括空穴传输材料和电子传输层材料。本发明中通过对倒置QLED器件结构的设计，进一步通过混合传输层的设计，制备得到了器件效率高、器件工作稳定性好的倒置QLED器件。
Bibliography:Application Number: CN202311574374