Bonding process of silicon carbide seed crystals

• Main Authors: QIAO SHUAISHUAI, LI YUANTIAN
• Format: Patent
• Language: Chinese; English
• Published: 27.02.2024
• Subjects: ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; ADHESIVES; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; DYES; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; PAINTS; POLISHES; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; USE OF MATERIALS AS ADHESIVES

The invention discloses a bonding process of silicon carbide seed crystals. The bonding process comprises the following steps that S1, graphite powder, a sodium silicate solution and polyvinyl alcohol are evenly mixed in proportion to form a flowing filling bonding prefabricated object; s2, one of the seed crystal and the crucible cover is coated with high-temperature glue, and then the seed crystal or the crucible cover coated with the high-temperature glue is evenly coated with the filling bonding prefabricated object to form a filling prefabricated layer; s3, putting the seed crystal or the crucible cover coated with the filling prefabricated layer into a high-purity carbon dioxide atmosphere to realize room-temperature curing; s4, adhering the other one of the seed crystal and the crucible cover to the filling prefabricated layer cured at the room temperature through high-temperature glue; and S5, sintering the adhered seed crystal and crucible cover in a hot-pressing sintering furnace. According to the b