Preparation method of high-purity indium and tin
The invention discloses a preparation method of high-purity indium and tin. The preparation method comprises a preheating process, a filtering dust removal process, a pyrolysis process, a high-temperature reduction process, a first-stage vacuum sublimation process, a first-stage desublimation proces...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
27.02.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a preparation method of high-purity indium and tin. The preparation method comprises a preheating process, a filtering dust removal process, a pyrolysis process, a high-temperature reduction process, a first-stage vacuum sublimation process, a first-stage desublimation process, a second-stage vacuum sublimation process and a second-stage desublimation process. Through the procedures, high-purity indium and tin with the purity of 4N9 can be obtained. The method provided by the invention has the characteristics of high production efficiency, low cost, high waste heat utilization rate, suitability for large-scale production and the like.
本发明公开了一种高纯铟和锡制备方法,包括预热工序、过滤除尘工序、热解工序、高温还原工序、一级真空升华工序、一级凝华工序、二级真空升华工序、二级凝华工序。通过以上工序,可得到纯度为4N9的高纯铟和锡。本发明提供的方法具有生产效率高,成本低,余热利用率高,适用于大规模生产等特点。 |
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Bibliography: | Application Number: CN202311362943 |