Semiconductor device

A semiconductor device is provided with a semiconductor element (40) in which an emitter electrode (42) is disposed on one surface (41a) of a semiconductor substrate (41) and a collector electrode is disposed on the back surface. The emitter electrode (42) has an exposed portion (421) that is expose...

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Bibliographic Details
Main Authors FUKUTANI KEITA, RAHMAN TOFIZUR
Format Patent
LanguageChinese
English
Published 20.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is provided with a semiconductor element (40) in which an emitter electrode (42) is disposed on one surface (41a) of a semiconductor substrate (41) and a collector electrode is disposed on the back surface. The emitter electrode (42) has an exposed portion (421) that is exposed from the opening portion (561) of the protective film (56) and provides a bonding region. The semiconductor substrate (41) has an active region (45), which is a region in which an RC-IGBT is formed, said region being a vertical element in which a current flows between the emitter electrode (42) and the collector electrode. The active region (45) includes an overlapping region (451) that overlaps the exposed portion (421) in a planar view, and a non-overlapping region (452) that does not overlap the exposed portion (421). The ratio of the diode region (45d) in the non-overlapping region (452) is higher than the ratio of the diode region (45d) in the overlapping region (451). 半导体装置具备在半导体衬底(41)的一面(41a)上配置有发射极电极(42)、
Bibliography:Application Number: CN202280046746