Semiconductor device, manufacturing method thereof and electronic equipment

• Main Authors: LI WEI, DONG YAOQI, ZHANG QIANG, XU JUNHAO, HOU CHAOZHAO
• Format: Patent
• Language: Chinese; English
• Published: 06.02.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor device, a manufacturing method thereof and electronic equipment, relates to the technical field of semiconductors, and can reduce the sub-threshold swing of a transistor. The semiconductor device includes a transistor. The transistor comprises a channel, a source electrode and a drain electrode; the source electrode and the drain electrode are arranged at two ends of the channel; a first insertion layer is arranged between the source electrode and the channel, and the first insertion layer is in contact with the source electrode and the channel. And the channel adopts a lightly doped semiconductor or an intrinsic semiconductor. And the drain electrode adopts a heavily doped semiconductor. The source electrode adopts a P-type heavily doped semiconductor; wherein the first insertion layer is made of a high-work-function material, and the distance between the Fermi level of the high-work-function material and the valence band of the channel semiconductor does not exceed 1/3