Hole injection/transmission layer, preparation method of hole injection/transmission layer, OLED device and preparation method of OLED device
The invention discloses a hole injection/transmission layer and a preparation method thereof, and an OLED device and a preparation method thereof, and the preparation method of the hole injection/transmission layer comprises the steps: (1) dissolving lead iodide in a first organic solvent, and carry...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
06.02.2024
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a hole injection/transmission layer and a preparation method thereof, and an OLED device and a preparation method thereof, and the preparation method of the hole injection/transmission layer comprises the steps: (1) dissolving lead iodide in a first organic solvent, and carrying out the ultrasonic treatment to obtain a PbI2 spin-coating solution; (2) spin-coating the PbI2 spin-coating liquid on a substrate; and (3) carrying out first annealing treatment after the step (2) to obtain a hole injection/transmission layer. The hole injection/transmission layer is prepared by spin coating and film forming on the surface of the substrate through the lead iodide spin coating liquid, PbI2 hole carriers are high in mobility and appropriate in energy level, so that the hole injection/transmission layer can serve as a hole injection layer and a hole transmission layer at the same time, the hole transmission layer and the hole injection layer are made of the same PbI2 material, and the hole injecti |
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Bibliography: | Application Number: CN202311682886 |