Thermal effect device structure, forming method thereof and thermal resistance obtaining method

• Main Authors: YE HAOHUA, WAN LUHONG, YU KAIHAO, HU MEILI, ZHU CHENDONG
• Format: Patent
• Language: Chinese; English
• Published: 06.02.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASURING; MEASURING QUANTITY OF HEAT; MEASURING TEMPERATURE; PHYSICS; SEMICONDUCTOR DEVICES; TESTING; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR

The invention discloses a thermal effect device structure, a forming method of the thermal effect device structure and a thermal resistance obtaining method, and the thermal effect device structure comprises a substrate which comprises a first device region; a first gate structure located on the first device region, wherein the first gate structure comprises a P-type transistor work function layer; the first source and drain regions are located on the two sides of the first gate structure, and N-type doped ions or P-type doped ions are arranged in the first source and drain regions. According to the thermal effect device structure, the forming method of the thermal effect device structure and the thermal resistance obtaining method, the accuracy of thermal resistance measurement of the transistor is improved. 一种热效应器件结构、热效应器件结构的形成方法以及热电阻获取方法，其中，热效应器件结构包括：衬底，所述衬底包括第一器件区；位于所述第一器件区上的第一栅极结构，所述第一栅极结构包括P型晶体管功函数层；位于所述第一栅极结构两侧的第一源漏区，所述第一源漏区内具有N型掺杂离子或P型掺杂离子。所述热效应器件结构、热效应器件结构的形成方法以及热电阻获取方法提升了晶体管的热电阻测量的准确性。