Semiconductor device

• Main Author: MIWA RYOTA
• Format: Patent
• Language: Chinese; English
• Published: 26.01.2024
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORSOR DYNAMO-ELECTRIC CONVERTERS; CONTROL OR REGULATION THEREOF; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; PULSE TECHNIQUE; SEMICONDUCTOR DEVICES

The invention provides a semiconductor device. In the semiconductor element (40), an element having a gate electrode is formed on a semiconductor substrate (41). The emitter electrode (42) is disposed on one surface of the semiconductor substrate (41). The collector electrode is disposed on the back surface of the semiconductor substrate (41). The gate pad (441) is disposed on one surface at a position different from that of the emitter electrode (42). The gate resistor (46) can adjust the resistance value, is disposed on one surface, and is connected between the gate electrode and the gate pad (441). 本发明提供半导体装置。在半导体元件(40)中，在半导体基板(41)形成有具有栅极电极的元件。发射极电极(42)配置在半导体基板(41)的一面上。集电极电极配置在半导体基板(41)的背面上。栅极焊盘(441)在一面上配置在与发射极电极(42)不同的位置。栅极电阻(46)能够调整电阻值，配置在一面上并连接在栅极电极与栅极焊盘(441)之间。